Ion-implanted silicon detectors

SARAD manufactures ion implanted silicon detectors for the alpha/beta spectroscopy since 1994.

Have A Question About This Product?

SARAD detectors have been approved for thousand times as OEM parts or inside our radiation detection equipment.

Key features are the robust design, low background and the outstanding spectroscopic performance even at low bias voltages. Only a 10 volts bias is required to deposit the whole emission energy of an alpha particle (up to 10 MeV) within the depletion layer. The BS types, especially designed for beta detection, provide a depleted region of 500 µm.

All types can be used under ambient conditions as well as in vacuum gauges. The entrance window is protected by an thin aluminium layer with a thickness of 50 nm (type V) or 500 nm (type E). The thicker aluminium of the E type detectors make them especially suitable for ambient light applications.

The detectors are delivered with a Microdot jack (industry standard) to guarantee the full compatibility with other manufacturers. BNC or SMA type jacks are optionally available.


Download Brochure

SKU: 40000014 Category:

Based on 0 reviews

0.0 overall

Only logged in customers who have purchased this product may leave a review.

There are no reviews yet.

Open chat
💬 Need help?
Scan the code
Powered by Social Media Guru
Request A Quote For Ion-implanted silicon detectors!
If you have any questions, Feel free to ask us.